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NTE56068 & NTE56069 TRIAC, 16A, High Commutation
Description: The NTE56068 and NTE56069 are glass passivated, high commutation TRIACs in an isolated full- pack type package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. Absolute Maximum Ratings: Repetitive Peak Off-Sate Voltage (Note 1), VDRM NTE56068 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56069 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On-State Current (Full Sine Wave, THS 38C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non-Repetitive Peak On-State Current, ITSM (Full Sine Wave, TJ = +25C prior to Surge) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec Repetitive Rate-of-Rise of On-State Current after Triggering, dIT/dt (ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/s Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Heatsink (Full or Half Cycle), RthJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Note 1. Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on-state. The rate-of-rise of current should not exceed 15A/s.
Electrical Characteristics: (TJ = +25C unless otherwise specfied)
Parameter Static Characteristics Gate Trigger Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) Latching Current MT2 (+), G (+) MT2 (+), G (-) MT2 (-), G (-) Holding Current On-State Voltage Gate Trigger Voltage Off-State Leakage Current Dynamic Characteristics Critical Rate-of-Rise of Off-State Voltage Critical Rate-of-Change of Commutating Current Gate Controlled Turn-On Time Isolation Characteristics RMS Isolation Voltage from All 3 Pins to External Heatsink Capacitance from T2 to External Heatsink VISOL CISOL f = 50 - 60Hz, Sinusoidal Waveform, R.H. 65%, Clean and Dustfree f = 1MHz - - - 10 2500 - V pF dVD/dt dIcom/dt tgt VDM = 67% VDRMmax, TJ = +125C, Exponential Waveform, Gate Open VDM = 400V, TJ = +125C, ITRMS = 16A, without Snubber, Gate Open ITM = 20A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/s 1000 - - 4000 28 2 - - - V/s A/ms s IH VT VGT ID VD = 12V, IT = 0.1A IT = 20A VD = 12V, IT = 0.1A VD = 400V, IT = 0.1A, TJ = +125C VD = VDRMmax, TJ = +125C IL VD = 12V, IT = 0.1A IGT VD = 12V, IT = 0.1A, Note 2 2 2 2 - - - - - - 0.25 - 18 21 34 31 34 30 31 1.2 0.7 0.4 0.1 50 50 50 60 90 60 60 1.5 1.5 - 0.5 mA mA mA mA mA mA mA V V V mA Symbol Test Conditions Min Typ Max Unit
Note 2. Device does not trigger in the MT2 (-), G (+) quadrant.
.181 (4.6) Max .114 (2.9) .252 (6.4) .126 (3.2) Dia Max .405 (10.3) Max Isol
.622 (15.0) Max
MT2
.118 (3.0) Max .531 (13.5) Min MT1 G
.098 (2.5)
.100 (2.54)

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